Magnetoresistive random access memory and method of manufacturing the same

ABSTRACT

A magnetoresistive random access memory (MRAM), including a bottom electrode layer on a substrate, a magnetic tunnel junction stack on the bottom electrode layer, and a top electrode layer on the magnetic tunnel junction stack, wherein the material of top electrode layer is titanium nitride, and the percentage of nitrogen in the titanium nitride gradually decreases from the top surface of top electrode layer to the bottom surface of top electrode layer.

BACKGROUND OF THE INVENTION 1. Field of the Invention

The present invention generally relates to a magnetoresistive randomaccess memory, and more specifically, to a magnetoresistive randomaccess memory with particular composition of top electrode.

2. Description of the Prior Art

Magnetoresistance (MR) effect has been known as a kind of effect causedby altering the resistance of a material through variation of outsidemagnetic field. The physical definition of such effect is defined as avariation in resistance obtained by dividing a difference in resistanceunder no magnetic interference by the original resistance. Currently, MReffect has been successfully utilized in production of hard disksthereby having important commercial values. Moreover, thecharacterization of utilizing GMR materials to generate differentresistance under different magnetized states could also be used tofabricate magnetoresistive random access memory (MRAM) devices, whichtypically has the advantage of keeping stored data even when the deviceis not connected to an electrical source.

The aforementioned MR effect has also been used in magnetic field sensorareas including, for example, electronic compass components used inglobal positioning system (GPS) of cellular phones for providinginformation regarding moving location to users. Currently, variousmagnetic field sensor technologies such as anisotropic magnetoresistance(AMR) sensors, giant magnetoresistance (GMR) sensors, magnetic tunneljunction (MTJ) sensors have been widely developed in the market.Nevertheless, nowadays MRAM still suffer many problems resulted fromprocesses, such as the problem of tail bit performance. How to come upwith an improved device to resolve these issues has become an importanttask in this field.

SUMMARY OF THE INVENTION

In order to improve the performance of tail bits in magnetoresistiverandom access memory (MRAM), the present invention hereby provides aMRAM structure with particular composition of top electrode to preventetchant penetrating through the top electrode and damaging the magnetictunnel junction (MTJ) thereunder.

One aspect of the present invention is to provide a magnetoresistiverandom access memory cell, which includes a substrate, a bottomelectrode layer on the substrate, a magnetic tunnel junction stack onthe bottom electrode layer, and a top electrode layer on the magnetictunnel junction stack, wherein a material of the top electrode layer istitanium nitride, and a percentage of nitrogen in the titanium nitridegradually decreases from a top surface of top electrode layer to abottom surface of top electrode layer.

Another aspect of the present invention is to provide a method offabricating magnetoresistive random access memory, which includes stepsof providing a substrate, forming a bottom electrode layer, a magnetictunnel junction stack and a top electrode layer sequentially on thesubstrate, wherein a material of the top electrode layer is titaniumnitride, and a percentage of nitrogen in the titanium nitride graduallydecreases from a top surface of top electrode layer to a bottom surfaceof top electrode layer, and patterning the bottom electrode layer, themagnetic tunnel junction stack and the top electrode layer into multiplemagnetoresistive random access memory cells.

These and other objectives of the present invention will no doubt becomeobvious to those of ordinary skill in the art after reading thefollowing detailed description of the preferred embodiment that isillustrated in the various figures and drawings.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings are included to provide a furtherunderstanding of the embodiments, and are incorporated in and constituteapart of this specification. The drawings illustrate some of theembodiments and, together with the description, serve to explain theirprinciples. In the drawings:

FIGS. 1-5 are schematic cross-sections illustrating the method offabricating a magnetoresistive random access memory in accordance withthe embodiment of present invention; and

FIG. 6 is a schematic cross-section of a magnetoresistive random accesscell in accordance with another embodiment of present invention.

It should be noted that all the figures are diagrammatic. Relativedimensions and proportions of parts of the drawings have been shownexaggerated or reduced in size, for the sake of clarity and conveniencein the drawings. The same reference signs are generally used to refer tocorresponding or similar features in modified and different embodiments.

DETAILED DESCRIPTION

Reference now be made in detail to exemplary embodiments of theinvention, which are illustrated in the accompanying drawings in orderto understand and implement the present disclosure and to realize thetechnical effect. It can be understood that the following descriptionhas been made only by way of example, but not to limit the presentdisclosure. Various embodiments of the present disclosure and variousfeatures in the embodiments that are not conflicted with each other canbe combined and rearranged in various ways. Without departing from thespirit and scope of the present disclosure, modifications, equivalents,or improvements to the present disclosure are understandable to thoseskilled in the art and are intended to be encompassed within the scopeof the present disclosure.

It should be readily understood that the meaning of “on,” “above,” and“over” in the present disclosure should be interpreted in the broadestmanner such that “on” not only means “directly on” something but alsoincludes the meaning of “on” something with an intermediate feature or alayer therebetween, and that “above” or “over” not only means themeaning of “above” or “over” something but can also include the meaningit is “above” or “over” something with no intermediate feature or layertherebetween (i.e., directly on something).

Further, spatially relative terms, such as “beneath,” “below,” “lower,”“above,” “upper,” and the like, may be used herein for ease ofdescription to describe one element or feature's relationship to anotherelement(s) or feature(s) as illustrated in the figures. The spatiallyrelative terms are intended to encompass different orientations of thedevice in use or operation in addition to the orientation depicted inthe figures. The apparatus may be otherwise oriented (rotated 90 degreesor at other orientations) and the spatially relative descriptors usedherein may likewise be interpreted accordingly.

Please refer to FIGS. 1-5, which are schematic cross-sectionsillustrating a method of fabricating a magnetoresistive random accessmemory (MRAM) in accordance with the embodiment of present invention. Asshown in FIG. 1, a substrate 100 made of semiconductor material is firstprovided, in which the semiconductor material maybe selected from thegroup consisting of silicon (Si), germanium (Ge), silicon germanium(SiGe) compounds, silicon carbide (SiC), and gallium arsenide (GaAs),etc. The substrate 100 is preferably defined with magnetic memoryregions and logic regions thereon. However, only the structure relevantto MRAM cell on the magnetic memory regions will be shown in the figurein case obscuring the focus of the present invention.

An inter-metal dielectric (IMD) layer 102, a stop layer 104 and aninter-layer dielectric (ILD) layer 106 are formed sequentially on thesubstrate 100. The material of inter-metal dielectric layer 102 ispreferably ultra low-k material, such as porous silicon oxide carbides(SiOC). The material of stop layer 104 is preferably nitrogen dopedcarbide, silicon nitride or silicon carbonitride (SiCN), etc, and thematerial of inter-layer dielectric layer 106 is preferablytetraethoxysilane (TEOS), but not limited thereto, wherein metal layers108 and contact plugs 110 may be formed respectively in the inter-metaldielectric layer 102 and the inter-layer dielectric layer 106 by usingsingle damascene process or dual damascene process. The metal layer 108and the contact plug 110 may be embedded in the inter-metal dielectriclayer 102, the stop layer 104 and the inter-layer dielectric layer 106and electrically connect with each other. The material of metal layer108 and contact plug 110 may be selected from the combination oftungsten (W), copper (Cu), aluminum (Al), titanium aluminum (TiAl) alloyand cobalt-tungsten-phosphorous (CoWP) alloy, etc, but not limitedthereto.

Please refer again to FIG. 1. A bottom electrode layer 112, a magnetictunnel junction (MTJ) stack 114 and a top electrode layer 116 arefurther formed sequentially on the inter-layer dielectric layer 106. Thebottom electrode layer 112, the magnetic tunnel junction stack 114 andthe top electrode layer 116 may be in-situ formed in the same chamber byusing physical vapor deposition (PVD). In the embodiment of presentinvention, the material of bottom electrode layer 112 preferablyincludes conductive materials, such as tantalum nitride (TaN), but notlimited thereto. According to other embodiment of the present invention,the bottom electrode layer 112 may include tantalum (Ta), platinum (Pt),copper (Cu), gold (Au), aluminum (Al) or the combination thereof. Themagnetic tunnel junction stack 114 is a multilayer structure, which mayinclude structures like seed layer, pinned layer, reference layer,tunneling barrier layer, free layer and metal spacer, etc. Generally,the pinned layer could be made of antiferromagnetic (AFM) materialincluding but not limited to for example ferromanganese (FeMn), platinummanganese (PtMn), iridium manganese (IrMn), nickel oxide (NiO), orcombination thereof, to fix or restrict the direction of magnetic momentof adjacent layers. The tunneling barrier layer could include oxidecontaining insulating material such as aluminum oxide (AlO_(X)) ormagnesium oxide (MgO), but not limited thereto. The free layer could bemade of ferromagnetic material including but not limited to iron (Fe),cobalt (Co), nickel (Ni), or the alloys thereof such ascobalt-iron-boron (CoFeB), in which the magnetized direction of the freelayer could be altered freely depending on the influence of outsidemagnetic field. Since detailed structure of the magnetic tunnel junctionstack 114 is not the key point of the present invention, all of theaforementioned multilayer structure will be represented by a magnetictunnel junction stack 114 in the figures.

In the embodiment, the material of top electrode layer 116 is titaniumnitride, which preferably has a composition gradient. That is, thecomposition of titanium nitride in entire top electrode layer 116 is notuniform. More specifically, the percentage of nitrogen in the titaniumnitride of top electrode layer 116 would preferably and graduallydecreases from the top surface (exposed surface) of top electrode layer116 to the bottom surface (the surface adjoining the magnetic tunneljunction stack 114) of top electrode layer 116, while the percentage oftitanium in the titanium nitride of top electrode layer 116 wouldpreferably and gradually increase from the top surface of top electrodelayer 116 to the bottom surface of top electrode layer 116. In otherwords, the portion adjacent to the bottom surface of top electrode layer116 or adjacent to the interface between the top electrode layer 116 andthe magnetic tunnel junction stack 114 is preferably provided withhigher concentration distribution of titanium or lower concentrationdistribution of nitrogen, while the portion adjacent to the top surfaceof top electrode layer 116 is preferably provided with higherconcentration distribution of nitrogen and lower concentrationdistribution of titanium, wherein the percentage of nitrogen in thetitanium nitride of top electrode layer 116 is greater than 0% and lessthan 50%. Detailed function of composition gradient in the titaniumnitride of top electrode layer 116 will be explained in laterembodiment.

Thereafter, as shown in FIG. 2, using photolithographic and etch processto pattern top electrode layer 116, magnetic tunnel junction stack 114and bottom electrode layer 112, thereby defining individual MRAM cells118. In this step, a reactive ion etching (RIE) process may be firstused with a silicon oxide layer as hard mask to pattern the topelectrode layer 116, so as to have less sidewall byproduct. An ion beametching (IBE) process is then used to pattern the magnetic tunneljunction stack 114, the bottom electrode layer 112 and the inter-layerdielectric layer 106 to define the MRAM cells 118. Since thecharacteristics of ion beam etching process, the top surface 106 a ofremaining inter-layer dielectric layer 106 after etching would bepreferably lower than the top surface of contact plug 110 and ispreferably a cambered or curved surface.

Thereafter, as shown in FIG. 3, forming a conformal liner layer 120 onthe surface of MRAM cells 118 and inter-layer dielectric layer 106,wherein the material of liner layer 120 preferably includes siliconnitride. However, other dielectric materials may also be selected, suchas silicon oxide, silicon oxynitride or silicon oxide carbides,depending on process requirements. Next, a dielectric layer 122, a stoplayer 124 and an inter-metal dielectric 126 are sequentially formed onthe liner layer 120. The dielectric layer 122 would fill up the gapbetween the MRAM cells 118 and be planarized by using planarizationprocess such as chemical mechanical polishing (CMP), so that it's topsurface would be level with or slightly higher than the MRAM cells 118.In the embodiment of present invention, the material of dielectric layer122 and inter-metal dielectric 126 is preferably ultra low-k material,and the material of stop layer 124 is preferably nitrogen doped carbide,silicon nitride or silicon carbonitride (SiCN).

Thereafter, as shown in FIG. 4, a dual damascene recess 128 is formed inthe inter-metal dielectric 126, which includes portions for contact holeand metal layer. The dual damascene recess 128 extends through the linerlayer 120 on the MRAM cells 118 to expose the top electrode layer 116thereof. In the embodiment of disclosure, the dual damascene recess 128may be formed by forming patterned photoresist and patterned hard maskon the inter-metal dielectric 126 and performing several etch processesand wet clean processes. Since how to form the dual damascene recess 128is not the key point of the present invention, relevant detailed stepswill not be disclosed in the specification and in the figures.

In the embodiment of present invention, the dual damascene recesses 128on the MRAM region and the dual damascene recesses on logic region (notshown) are intended to be formed in the same processes. Regarding thedevices on the logic region, a wet etch process would be additionallyperformed after the dual damascene recesses are formed in order toremove polymer byproduct and TiN-based hard mask layer exposed from therecesses. The etchant used in this wet etch process, such as DuPont'sEKC residue remover series combined with hydrogen peroxide solution, hasquite high etching power to titanium nitride and oxide thereof.Moreover, the titanium nitride layer is generally grown in the form ofcolumn-like polycrystalline structure. This type of titanium nitridelayer has high surface toughness, with multiple inherent pinhole defectsextending directly downward to the bottom of titanium nitride layerbetween the crystalline columns. For this reason, the aforementioned wetetch process used to remove the hard mask on logic region wouldsimultaneously remove a part of TiN-based top electrode layer 116 on theMRAM region. The etchant may even further penetrate to the bottom of topelectrode layer 116 and damage underlying magnetic tunnel junction stack114, so that the ferromagnetic layer in the magnetic tunnel junctionstack 114 would lose its ferromagnetism. This phenomenon especiallycauses the issue of tail bits failure.

In the present invention, the advantage of having a TiN compositiongradient in the top electrode layer 116 is that the magnetic tunneljunction stack 114 may be prevented from the damage by the wet etchprocess. The principle of this prevention lies in that the less thenitrogen composition in the titanium nitride, its crystal form is closerto compact metal form rather than polycrystalline form. That is, thegrain size and surface toughness of the titanium nitride will be smallerand the pinhole defects will be fewer. Through the design of lessnitrogen percentage in the TiN composition of top electrode layer 116 inportion closer to the magnetic tunnel junction stack 114, the etchant isnot easy to penetrate through the magnetic tunnel junction stack 114, sothat the underlying magnetic tunnel junction stack 114 may be preventedfrom the damage by the etchant.

Thereafter, as shown in FIG. 5, the dual damascene recess 128 is filledwith required metal material, for example, including titanium (Ti),titanium nitride (TiN), tantalum (Ta) and/or tantalum nitride (TaN) asbarrier layers and selected from low resistance material like tungsten(W), copper (Cu), aluminum (Al), titanium aluminum (TiAl) alloy,cobalt-tungsten-phosphorous (CoWP) alloy or the combination thereof aslow resistance metal layers. A planarization process such as a CMPprocess is then performed to remove a part of the metal material and toform the dual damascene structure consisting of contact plug 130 andmetal layer 132, in order to electrically connect with underlying topelectrode layer 116 of the MRAM cell 118.

According to the process method in aforementioned embodiment, thepresent invention hereby provides a novel magnetoresistive random accessmemory cell 118. As shown in FIG. 5, the structure of MRAM cell 118includes a bottom electrode layer 112 on a substrate 100, a magnetictunnel junction stack 114 on the bottom electrode layer 112, and a topelectrode layer 116 on the magnetic tunnel junction stack 114, whereinthe material of top electrode layer 116 is titanium nitride, and thepercentage of nitrogen in the titanium nitride gradually decreases fromthe top surface of top electrode layer 116 to the bottom surface of topelectrode layer 116, and the percentage of nitrogen in the titaniumnitride is greater than 0% and less than 50%.

In addition to the aforementioned characteristics of TiN compositiongradient, in other embodiment, other features may be added to the MRAMto improve the protection effect for magnetic tunnel junction stack.Please refer to FIG. 6, which is a schematic cross-section of amagnetoresistive random access cell in accordance with anotherembodiment of present invention. As shown in FIG. 6, a hard mask layer134 may be disposed between the top electrode layer 116 and the contactplug 130 of the MRAM cell 118. The material of hard mask layer 134 ispreferably tantalum (Ta) or tantalum nitride (TaN), which may preventthe etchant at top surface of top electrode layer 116 penetrating to themagnetic tunnel junction stack 114 through the top electrode layer 116.Alternatively, an etch stop layer 136 may be disposed between the topelectrode layer 116 and the magnetic tunnel junction stack 114. Thematerial of etch stop layer 136 is preferably an multilayer stack ofalternating ruthenium (Ru) or ruthenium oxide (RuO), which has excellentanti-corrosion characteristics to further prevent the etchant damagingthe magnetic tunnel junction stack 114. The design of alternating layerstack of ruthenium and ruthenium oxide may also prevent peeling issue ofmagnetic tunnel junction stack 114 due to the corrosion by etchant. Theaforementioned hard mask layer 134 and etch stop layer 136 may also bein-situ formed with the layer structures like bottom electrode layer112, magnetic tunnel junction stack 114 and top electrode layer 116 inthe same chamber by using physical vapor deposition (PVD).

Those skilled in the art will readily observe that numerousmodifications and alterations of the device and method may be made whileretaining the teachings of the invention. Accordingly, the abovedisclosure should be construed as limited only by the metes and boundsof the appended claims.

1. A magnetoresistive random access memory cell, comprising: asubstrate; a bottom electrode layer on said substrate; a magnetic tunneljunction stack on said bottom electrode layer; and a top electrode layeron said magnetic tunnel junction stack, wherein a material of said topelectrode layer is titanium nitride, and a percentage of nitrogen insaid titanium nitride gradually decreases from a top surface of topelectrode layer to a bottom surface of top electrode layer.
 2. Themagnetoresistive random access memory cell of claim 1, wherein saidpercentage of nitrogen in said titanium nitride is greater than 0% andless than 50%.
 3. The magnetoresistive random access memory cell ofclaim 1, further comprising a hard mask layer disposed on said topelectrode layer, wherein a material of said hard mask layer is tantalumor tantalum nitride.
 4. The magnetoresistive random access memory cellof claim 1, further comprising an etch stop layer disposed between saidtop electrode layer and said magnetic tunnel junction, wherein amaterial of said etch stop layer comprises ruthenium or ruthenium oxide.5. The magnetoresistive random access memory cell of claim 4, whereinsaid etch stop layer is a layer stack of alternating ruthenium layersand ruthenium oxide layers.
 6. The magnetoresistive random access memorycell of claim 1, wherein said magnetic tunnel junction layer comprisesseed layer, pinned layer, reference layer, tunneling barrier layer, freelayer, and metal spacer.
 7. A method of fabricating magnetoresistiverandom access memory, comprising: providing a substrate; forming abottom electrode layer, a magnetic tunnel junction stack and a topelectrode layer sequentially on said substrate, wherein a material ofsaid top electrode layer is titanium nitride, and a percentage ofnitrogen in said titanium nitride gradually decreases from a top surfaceof top electrode layer to a bottom surface of top electrode layer; andpatterning said bottom electrode layer, said magnetic tunnel junctionstack and said top electrode layer into multiple magnetoresistive randomaccess memory cells.
 8. The method of fabricating magnetoresistiverandom access memory of claim 7, wherein said percentage of nitrogen insaid titanium nitride is greater than 0% and less than 50%.
 9. Themethod of fabricating magnetoresistive random access memory of claim 7,further comprising a hard mask layer disposed on said top electrodelayer, wherein a material of said hard mask layer is tantalum ortantalum nitride.
 10. The method of fabricating magnetoresistive randomaccess memory of claim 7, further comprising an etch stop layer disposedbetween said top electrode layer and said magnetic tunnel junction,wherein a material of said etch stop layer comprises ruthenium orruthenium oxide.
 11. The method of fabricating magnetoresistive randomaccess memory of claim 10, wherein said etch stop layer is a layer stackof alternating ruthenium layers and ruthenium oxide layers.
 12. Themethod of fabricating magnetoresistive random access memory of claim 7,wherein said magnetic tunnel junction layer comprises seed layer, pinnedlayer, reference layer, tunneling barrier layer, free layer, and metalspacer.